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| VUO 50 Three Phase Rectifier Bridge IdAV = 58 A VRRM = 800-1800 V VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Type ~ ~ ~ + + ~ + ~~ VUO 50-08NO3 VUO 50-12NO3 VUO 50-14NO3 VUO 50-16NO3 VUO 50-18NO3* - -Maximum Ratings 58 75 A A A A A A A2s A2s As A2s C C C V~ V~ Nm lb.in. g 2 * delivery time on request Symbol IdAV x IdAVM x IFSM Test Conditions TC = 85C, module module TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJC RthJH dS dA a 50/60 Hz, RMS IISOL 1 mA Mounting torque typ. Test Conditions VR = VRRM; VR = VRRM; IF = 150 A; TVJ = 25C TVJ = TVJM TVJ = 25C t = 1 min t=1s (M5) (10-32 UNF) t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop 1/4" fast-on terminals UL registered E 72873 q q q q q q q 500 525 415 440 1250 1160 860 810 -40...+125 125 -40...+125 3000 3600 2-2.5 18-22 50 Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Rectifier for DC motors field current q q q q Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling q q q Dimensions in mm (1 mm = 0.0394") Characteristic Values 0.3 5 1.9 0.9 6.0 1.62 0.27 2.22 0.37 10 9.4 50 mA mA V V mW K/W K/W K/W K/W mm mm m/s2 Use output terminals in parallel connection! For power-loss calculations only per diode, DC current per module per diode, DC current per module Creeping distance on surface Creepage distance in air Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. x for resistive load at bridge output IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 VUO 50 Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 I2t versus time (1-10 ms) Fig. 3 Max. forward current at case temperature Fig. 4 Power dissipation versus forward current and ambient temperature Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 1.21 0.1339 0.2763 0.600 ti (s) 0.1015 0.1026 0.4919 0.620 Fig. 5 Transient thermal impedance junction to heatsink per diode (c) 2000 IXYS All rights reserved 2-2 |
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